powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2003 powersem reserves the right to change limits, test conditions and dimensions data according to iec 60747 and refer to a single thyristor/diode unless otherwise stated. i frms = 2x 300 a i favm = 2x 165 a v rrm = 800-1800 v features international standard package direct copper bonded al 2 o 3 -ceramic base plate planar passivated chips isolation voltage 3600 v~ ul registered, e 148688 applications supplies for dc power equipment dc supply for pwm inverter field supply for dc motors battery dc power supplies advantages space and weight savings simple mounting improved temperature and power cycling reduced protection circuits dimensions in mm (1 mm = 0.0394") v rsm v rrm type vv 900 800 pskd 142/08 1300 1200 pskd 142/12 1500 1400 pskd 142/14 1700 1600 pskd 142/16 1900 1800 pskd 142/18 312 diode modules preliminary data sheet pskd 142 symbol test conditions characteristic values i r t vj = t vjm ; v r = v rrm 20 ma v f i f = 300 a; t vj = 25c 1.3 v v t0 for power-loss calculations only 0.8 v r t t vj = t vjm 1.3 m ? q s t vj = 125c; i f = 300 a, -di/dt = 50 a/s 550 c i rm 235 a r thjc per diode; dc current 0.21 k/w per module other values 0.105 k/w r thjk per diode; dc current see fig. 6/7 0.31 k/w per module 0.155 k/w d s creepage distance on surface 12.7 m m d a strike distance through air 9.6 m m a maximum allowable acceleration 50 m/s 2 symbol test conditions maximum ratings i frms t vj = t vjm 300 a i favm t c = 100c; 180 sine 165 a i fsm t vj = 45c; t = 10 ms (50 hz), sine 4700 a v r = 0 t = 8.3 ms (60 hz), sine 5000 a t vj = t vjm t = 10 ms (50 hz), sine 4100 a v r = 0 t = 8.3 ms (60 hz), sine 4300 a i 2 dt t vj = 45c t = 10 ms (50 hz), sine 110 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 104 000 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 84 000 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 77 000 a 2 s t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m6) 2.25-2.75/20-25 nm/lb.in. terminal connection torque (m6) 4.5-5.5/40-48 nm/lb.in. weight typical including screws 120 g 3 1 2
powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2003 powersem reserves the right to change limits, test conditions and dimensions fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 dt versus time (1-10 ms) fig. 2a maximum forward current at case temperature fig. 3 power dissipation versus forward current and ambient temperature (per diode) fig. 4 single phase rectifier bridge: power dissipation versus direct output current and ambient temperature r = resistive load l = inductive load circuit b 2 2 x pskd 142
powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2003 powersem reserves the right to change limits, test conditions and dimensions fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 6 transient thermal impedance junction to case (per diode) fig. 7 transient thermal impedance junction to heatsink (per diode) r thjk for various conduction angles d: d r thjk (k/w) dc 0.31 180 0.323 120 0.333 60 0.360 30 0.395 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 4 0.1 1.29 r thjc for various conduction angles d: d r thjc (k/w) dc 0.210 180 0.223 120 0.233 60 0.260 30 0.295 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 circuit b 6 3 x pskd 142
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